TEST INTERFACE BOARD

  • BOST Interface Solution Online Inquiry    

    Feature

    Supply customized test solution

    Speed X2 ~ X8

    Parallel expansion

    Command code interface

    LUT pattern

    Source sync & clock sync schem

    Variable mode register setting

    Multi firmware configuration

    BOST is an optimal solution to suppress the rise of COT caused by increasing the speed and density of memory semiconductors. It will maximize productivity because it contributes to parallel expansion by testing the latest devices using old equipment without adding new facilities.

    BOST Solution Development Experience

    Target Tester Speed Benefit Application
    LPDDR2 T5581 / 85 800Mbps Speed up X2
    Para ext x4
    AC, DC, IDD
    LPDDR2 Magnum 2X 1066Mbps Speed up X2
    Para ext x4
    AC, DC, IDD
    DDR3 T5581 / 85 1Gbps Speed up X2
    Para ext x4
    AC, DC, IDD
    DDR3 T5581 / 85 1600Mbps(DDR)
    2133Mbps(SDR)
    Speed up x4~x8
    Para ext x4
    AC, DC, IDD
    DDR4 T5581 / 85 1600Mbps(DDR)
    2400Mbps(SDR)
    Speed up x4~x8
    Para ext x4
    AC, DC, IDD
    eMCP
    (LPDDR2 + eMMC)
    Magnum 2X 1066Mbps Speed up X2
    Para ext x4 & Concurrent
    AC, DC, IDD
  • CFDS Interface Solution Online Inquiry    

    Feature

    TE Application : T5581, T5585, T5588, T5593, T5503, Ultra Memory, Magnum

    Target Device : DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6

    Single Ended Input, Differential Output

    Given the existing Low Speed Testers, the test environment requires a new high-speed tester as the CLK speed of memories(e.g. DDR3, DDR4, LPDDR3, LPDDR4, GDDR5, GDDR6) increases.

    TSE’s CFDS interface solution utilizes existing a Low-Frequency Tester to realize High-Frequency Clock so that it can test a high-speed clock sync memory at a low cost without investing in a new tester.

  • Power Boost Interface Solution Online Inquiry    

    Feature

    Test Device DDR3, DDR4, LPDDR3, LPDDR4, GDDR5
    Input Voltage +2.5~5.5V
    Output Voltage +0.75~3.3V
    Output Current 2A
    Tracking Voltage +0.75~3.3V
    Accuracy ±5mV

    Thicker, thinner and more powerful devices are preferred for easy portability as the center of gravity moves from PC to smartphone.

    Low-power DDR products are being developed as a way to reduce power consumption as memories evolve, and a low-power compensation Power Boost Interface Solution is being provided for testing low-power memory products.


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